| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an oxide cerium polishing agent, which has a proper dispersing property, suppresses generation of polishing damage and can flatly polish a surface to be polished of such an oxide silicon insulating film and so on, and a polishing method for a substrate in which the substrate for a semiconductor, having a high quality and a high reliability can be obtained easily and at a proper yield ratio. SOLUTION: The polishing method for a substrate has the feature of providing with an oxide cerium polishing agent made of a slurry having a range of weight ratio of oxide cerium and a dispersing agent which attaches with oxide cerium which is in the range of 1 to 0.002 or 1 to 0.005 and polishing the prescribed substrate by the oxide cerium polishing agent.</p> |
