| 摘要 |
PROBLEM TO BE SOLVED: To enable to control the thickness of active layers at will when a SOI substrate having silicon active films of different thickness is manufactured. SOLUTION: The SOI substrate is manufactured by operations including a step of forming a groove in a region on a semiconductor substrate on which a second region having an active layer of second thickness larger than a first thickness of an active layer of a first region, implanting oxygen ion onto the surface of the semiconductor substrate and at least onto the bottom of the groove, performing heat treatment, forming an imbedded oxide film of the first region and forming an active layer of the first thickness on the surface of the semiconductor substrate and an imbedded oxide film of the second region at least in the bottom of the groove; and a step for depositing a crystalline semiconductor layer by a selective epitaxial growth, and forming an active layer of the second region of the second thickness in the groove.
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