| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure capable of restraining irregularity of characteristic of a semiconductor device. SOLUTION: A semiconductor device is provided with a substrate which has a semiconductor region at least on a surface, a pair of high concentration impurity layers as a source/drain region which are formed on a surface layer of the semiconductor region, a pair of first low concentration impurity layers which are formed between the high concentration impurity layers and a channel region between a pair of the high concentration impurity layers and have the same conductivity type as the high concentration impurity layers, and a pair of second low concentration impurity layers which are formed so as to surround the high concentration impurity layers and have the same conductivity type as the high concentration impurity layers. Thus, irregularity of characteristic of the semiconductor device is restrained.
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