发明名称 PHOTOMASK BLANK, PHOTOMASK AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To obtain a photomask blank of a chromium system having high intra-surface uniformity, good controllability in manufacture and high-quality by using sputtering gas containing at least carbon dioxide and inert gas in depositing a chromium system film by a reactive sputtering method and a photomask. SOLUTION: This photomask blank formed with at least one layer of the chromium system film on a transparent substrate is constituted by depositing the chromium-base film by the reactive sputtering method using chromium or the chromium containing at least one kind of oxygen, nitrogen and carbon and using the sputtering gas containing at least the carbon dioxide and the inert gas.</p>
申请公布号 JP2001305716(A) 申请公布日期 2001.11.02
申请号 JP20010033260 申请日期 2001.02.09
申请人 SHIN ETSU CHEM CO LTD 发明人 KANEKO HIDEO;INAZUKI SADAOMI;MARUYAMA TAMOTSU;OKAZAKI SATOSHI
分类号 C23C14/34;G03F1/50;G03F1/54;(IPC1-7):G03F1/08 主分类号 C23C14/34
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