发明名称 Process for producing a semiconductor wafer
摘要 A process is for producing a semiconductor wafer with a front surface and a back surface, in which the semiconductor wafer is subjected to two-sided polishing. The process includes the following: (a) producing a hydrophobic surface on the semiconductor wafer by treating the semiconductor wafer with an aqueous HF solution; (b) simultaneous polishing of the front surface and the back surface of the semiconductor wafer with a surface which has been rendered hydrophobic, with an alkaline polishing abrasive being continuously supplied between two rotating upper and lower polishing plates, which are both covered with a polishing cloth, the pH of the polishing abrasive being from pH 8.5 to pH 12.5; (c) after an intended polishing abrasion has been reached, supplying a stopping agent to the semiconductor wafer; and (d) removing the semiconductor wafer from the polishing plates. There is also a carrier for the double-side polishing of at least one semiconductor wafer, having a cutout for holding the semiconductor wafer which is lined with a shaped part made from plastic. The shaped part is constructed in such a manner that it divides a free space between an edge of the semiconductor wafer and the carrier into a plurality of separate empty spaces.
申请公布号 US2001036797(A1) 申请公布日期 2001.11.01
申请号 US20010824394 申请日期 2001.04.02
申请人 WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG 发明人 FABRY LASZLO;LECHNER GABRIELE;SCHNEGG ANTON;EHLERT ANDREAS
分类号 B24B37/04;H01L21/304;H01L21/306;(IPC1-7):B24B1/00 主分类号 B24B37/04
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