发明名称 Resist composition for use in chemical amplification and method for forming a resist pattern thereof
摘要 Disclosed is a negative resist composition comprising an alkaline-soluble resin and a compound having an oxetane structure. This composition further comprises an acid generator and provides a fine resist pattern with high sensitivity at a wavelength of less than 200 nm. The resist composition can be used in both monolayer and bilayer resist methods, thereby meeting the requirements for high sensitivity at a shorter wavelength and etching resistance.
申请公布号 US2001036594(A1) 申请公布日期 2001.11.01
申请号 US20010785306 申请日期 2001.02.20
申请人 FUJITSU LIMITED 发明人 KOZAWA MIWA;NOZAKI KOJI;WATANABE KEIJI;YANO EI
分类号 G03F7/038;G03F7/075;G03F7/09;G03F7/38;(IPC1-7):G03F7/038;G03F7/004;G03F7/11;G03F7/36;G03F7/30;G03F7/40 主分类号 G03F7/038
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