发明名称 |
Resist composition for use in chemical amplification and method for forming a resist pattern thereof |
摘要 |
Disclosed is a negative resist composition comprising an alkaline-soluble resin and a compound having an oxetane structure. This composition further comprises an acid generator and provides a fine resist pattern with high sensitivity at a wavelength of less than 200 nm. The resist composition can be used in both monolayer and bilayer resist methods, thereby meeting the requirements for high sensitivity at a shorter wavelength and etching resistance.
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申请公布号 |
US2001036594(A1) |
申请公布日期 |
2001.11.01 |
申请号 |
US20010785306 |
申请日期 |
2001.02.20 |
申请人 |
FUJITSU LIMITED |
发明人 |
KOZAWA MIWA;NOZAKI KOJI;WATANABE KEIJI;YANO EI |
分类号 |
G03F7/038;G03F7/075;G03F7/09;G03F7/38;(IPC1-7):G03F7/038;G03F7/004;G03F7/11;G03F7/36;G03F7/30;G03F7/40 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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