发明名称 |
NMOS negative charge pump |
摘要 |
A negative charge pump circuit comprises a plurality of charge pump stages connected in series to each other. Each stage has a stage input terminal and a stage output terminal. A first stage has the stage input terminal connected to a reference voltage, a final stage has the stage output terminal operatively connected to an output terminal of the charge pump at which a negative voltage is developed; intermediate stages have the respective stage input terminal connected to the stage output terminal of a preceding stage and the respective stage output terminal connected to the stage input terminal of a following stage. Each stage comprises a first N-channel MOSFET with a first electrode connected to the stage input terminal and a second electrode connected to the stage output terminal, a second N-channel MOSFET with a first electrode connected to the stage output terminal and a second electrode connected to a gate electrode of the first N-channel MOSFET, a boost capacitor with one terminal connected to the gate electrode of the first N-channel MOSFET and a second terminal driven by a respective first digital signal switching between the reference voltage and a positive voltage supply, and a second capacitor with one terminal connected to the charge pump stage output terminal and a second terminal connected to a respective second digital signal switching between the reference voltage and the voltage supply. A gate electrode of the second N-channel MOSFET is connected, in the first stage, to a third digital signal switching between the reference voltage and the voltage supply, while in the remaining stage the gate electrode of the second N-channel MOSFET is connected to the stage input terminal.
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申请公布号 |
US6130572(A) |
申请公布日期 |
2000.10.10 |
申请号 |
US19980012331 |
申请日期 |
1998.01.23 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
GHILARDELLI, ANDREA;MULATTI, JACOPO;BRANCHETTI, MAURIZIO |
分类号 |
H02M3/07;(IPC1-7):G05F3/02 |
主分类号 |
H02M3/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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