| 发明名称 |
ETCHING SOLUTION, ETCHED ARTICLE AND METHOD FOR ETCHED ARTICLE |
| 摘要 |
<p>An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorusglass (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25 DEG C.</p> |
| 申请公布号 |
EP1150342(A1) |
申请公布日期 |
2001.10.31 |
| 申请号 |
EP19990972781 |
申请日期 |
1999.11.22 |
| 申请人 |
DAIKIN INDUSTRIES, LTD. |
发明人 |
KEZUKA, TAKEHIKO;SUYAMA, MAKOTO;ITANO, MITSUSHI |
| 分类号 |
H01L21/308;C03C15/00;C09K13/08;C23F1/16;H01L21/311;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/308 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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