| 摘要 |
PROBLEM TO BE SOLVED: To solve the following problems existing thus far in etching of metallic films by wet etching of a dipping system; if the etching described above is accompanied by gas (such as hydrogen or nitrogen dioxide) in the reaction process of the etching, the films to be etched of the portions where the gas is generated do not come into contact with an etchant and therefore the etching does not progress any more and the patterns of these portions eventually remain, giving rise to an inter-wiring shorting defect. SOLUTION: The etching is switched to the etching of a shower type using a spray nozzle 7 during the course of the etching of the dipping type and the work to remove the gas 5 from the surfaces of the films to be etched is carried out by the pressure of the shower. The gas 5 on a substrate 1 is removed by the shower and the etching is carried out again by the dipping system and therefore all the films to be etched may be etched.
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