| 摘要 |
A monolithically integrated semiconductor circuit apparatus includes circuit elements disposed on a semiconductor substrate. The circuit elements include at least one semiconductor memory device, drive circuits, and a digital logic component monolithically integrated on the semiconductor substrate. A first contact-making plane is provided which is closer to a main surface of the semiconductor substrate than a penultimate contact-making plane, which is closer to the main surface of the semiconductor substrate than a last contact-making plane. The first, penultimate, and last interconnect patterns electrically interconnect the plurality of circuit elements. A protection device is formed at least in a partial region of the penultimate interconnect pattern. The protection device includes at least a fuse or an antifuse and is assigned to a redundancy activation for defective memory cells and memory cell groups in the semiconductor memory device. The invention furthermore relates to a method for fabricating such a monolithically integrated semiconductor circuit apparatus.
|
