| 摘要 |
The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 mum and for use at wavelengths below 300 nm includes a substrate with a layer deposited on the substrate. The layer comprises a group IV, V or VI transitional metal nitride and silicon nitride SixNy. The attenuated phase shift mask has a thickness between about 500 angstroms and 2000 angstroms, where the group IV, V or VI transitional metal nitride comprises about ten to forty percent of the layer.
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