发明名称 |
Reduced parasitic capacitance semiconductor devices |
摘要 |
Semiconductor devices comprise a substrate having a semiconductor disposed thereon with a layer of dielectric material, less than 10 microns thick, disposed about the semiconductor; the dielectric layer has a bond pad disposed on its upper surface a via lined with an electrically conductive material and extending between the bond pad and the semiconductor form an electrically conductive path between the semiconductor device and the bond pad.
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申请公布号 |
US6310394(B1) |
申请公布日期 |
2001.10.30 |
申请号 |
US19980139685 |
申请日期 |
1998.08.25 |
申请人 |
TYCO ELECTRONICS |
发明人 |
ANAND YOGINDER;CHINOY PERCY BOMI |
分类号 |
H01L23/29;H01L23/485;H01L23/66;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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