| 摘要 |
PURPOSE: A flash EEPROM cell and a program method thereof are provided to enhance program efficiency by forming a diode junction on a center region of a channel. CONSTITUTION: The first floating gate(303) is formed on a semiconductor substrate(301). The first tunneling oxide layer(302) is formed between the first floating gate(303) and the semiconductor substrate(301). An insulating layer sidewall(304) is formed at both sides of the first floating gate(303). A source region(306a) and a drain region(306b) are formed on the semiconductor substrate(301) of both sides of the first floating gate(303). A diode junction region(305) is formed at a position deeper than the source region(306a) and the drain region(306b). A thermal oxide layer(307) is formed on a surface of the semiconductor substrate(301). An insulating layer(308) is formed the semiconductor substrate(301). The second floating gate(309) connected with the first floating gate(303) is formed on a contact hole and the insulating layer(308) adjacent to the contact hole. An inter-poly oxide layer(310) is formed on the second floating gate(309) and the insulating layer(308). A plurality of control gate(311) and the second tunneling oxide layer(312) are formed on the inter-poly oxide layer(310). An erase gate(313) is formed on the second tunneling gate(311).
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