| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material having superior sensitivity and resolution, particularly in ArF excimer laser lithography, being advantageous also to etching because film thickness can be increased and capable of easily forming a fine pattern perpendicular to a substrate. SOLUTION: In the resist material containing a base resin, an acid forming agent, a solvent and a basic compound, the basic compound is a polycyclic compound containing only one nitrogen atom in the ring. |
