发明名称 PLASMA PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device capable of making an electric field distribution more uniform on the surface of an electrode in plasma processing in which high-density plasma coping with more micronization is used and an electrode used for the same. SOLUTION: In a plasma processing device which subjects a substrate W as an object of processing to plasma processing, an upper electrode 21 is equipped with an electrode plate 23 confronting a lower electrode 5 and a dielectric member 61 provided on the rear of the electrode plate 23 at its center. The dimensions and permittivity of the dielectric member 61 are so set as to enable it to resonate with the frequency of a supplied high-frequency electric power, and to induce an electrical field crossing the electrode plate at right angles in itself.
申请公布号 JP2001298015(A) 申请公布日期 2001.10.26
申请号 JP20000116304 申请日期 2000.04.18
申请人 TOKYO ELECTRON LTD 发明人 HIMORI SHINJI;TAKAHASHI TOSHIKI;KOMATSU TAKUMI
分类号 H05H1/46;B01J19/08;C23C16/509;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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