发明名称 Ni-P SPUTTERING TARGET AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an Ni-P sputtering target used for deposition of a hard layer such as seed film for a hard disk, and its manufacturing method. SOLUTION: The Ni-P sputtering target has a structure prepared by sintering prealloyed powder composed essentially of Ni and P. Further, the maximum particle size of a powder trace phase originating from the above powder, recognized in the microstructure of the target is regulated to <=100μm and also oxygen content is regulated to <=300 ppm.
申请公布号 JP2001295033(A) 申请公布日期 2001.10.26
申请号 JP20000105070 申请日期 2000.04.06
申请人 HITACHI METALS LTD 发明人 TANIGUCHI SHIGERU
分类号 C23C14/34;C22C19/03;G11B5/84;(IPC1-7):C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址
您可能感兴趣的专利