PROCEDE DE TRAITEMENT DE SUBSTRATS POUR LA MICROELECTRONIQUE ET SUBSTRATS OBTENUS PAR CE PROCEDE

摘要

The invention relates to a process for the treatment of substrates ( 1 ) for microelectronics or optoelectronics comprising a working layer ( 6 ) at least partially composed of an oxidizable material on at least one of their faces, this process comprising: a first sacrificial oxidation stage for removing material constituting the working layer ( 6 ) over a certain surface thickness of each substrate ( 1 ), a stage of polishing ( 200 ) the face which has been subjected to the first sacrificial oxidation stage ( 100 ), and a second sacrificial oxidation stage for again removing material constituting the working layer ( 6 ) on the polished face ( 17 ).