| 摘要 |
A protective circuit in a semiconductor device includes a protective n-channel MOS transistor connected between the power source line and the ground line, with the gate and drain being connected together, and an n-p-n transistor having a base connected to the source of the protective n-channel MOS transistor and connected between the power source line and the ground line. The protective circuit disposed in a low-voltage semiconductor device has a lower power dissipation due to a low junction leakage current.
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