| 摘要 |
<p>In a semiconductor device according to the present invention, a diffusion region (5,7) on the surface of an output region 84) for a substrate electric potential and a element segregation region (6) under a field insulating layer (2) are electrically connected together, at the end portion of the field insulating layer (2) and in the diffusion region (5,7). Thus, the substrate electric potential can be easily output at the surface of the output region, even if the diffusion region (5,7) on the surface of the output region is formed shallow by a low temperature thermal treatment due to a fine designing of the semiconductor device. In the fabrication process according to the present invention, after formation, by patterning, of the protruded output region (4) of the substrate electric potential with its end portion being tapered, impurities are implanted in the tapered portion. Therefore, the diffusion region (5,7) on the surface of the output region and the element segregation region (6) under the field insulating region (2) are electrically connected together through the diffusion region (5,7) on the tapered portion, which allows easy output of the substrate electric potential from the surface of the output region (4), even if the diffusion region on the surface of the output region is formed shallow by lower temperature thermal treatment due to a fine designing of semiconductor device. The process of patterning the output region in the form of a protruded shape is also required, but the process is completed through a procedure using only one ion implantation and one low temperature thermal treatment (selective oxidation), thereby significantly simplifying the fabrication process. <IMAGE></p> |
