| 摘要 |
<p>A method of crystallising a semiconductor film (3) deposited on a supporting substrate (1,2) is disclosed together with apparatus for the same. The method comprising the steps of (a) with a laser (5), exposing each of a series of discrete regions (a to n) of the semiconductor film to one or more laser beam (4) pulses (an 'exposure'); (b) monitoring the energy output of the laser (5); and (c) if the energy output of the laser (5) during an exposure of a discrete region (a to n) exceeds a predetermined threshold, re-exposing that discrete region to one or more laser beam (4) pulses. Also disclosed is a TFT (12) manufactured by said method and active matrix device (20) comprising a row (24) and column (23) array of active elements (22), each having such a switching TFT (12).</p> |
