| 摘要 |
PURPOSE: To provide a semiconductor memory in which an increment in pattern area is suppressed to the minimum and a BIST circuit which can obtain redundancy relieving information is realized, a fault rate of the BIST circuit itself can be reduced by using simple algorithm and its test method. CONSTITUTION: This device is provided with a memory circuit 10 having an array 11 of a normal memory cell and an array 12 of a redundancy cell, a storage element 16 for storing redundancy data consisting of non-volatile elements in which storage data can be programmed, from the outside and cannot be rewritten, a register 15 storing data of the storage elements after supplying power, a redundancy decision circuit 14 deciding whether a redundancy cell is used or not by comparing data stored in the register with an address inputted from the outside, and a redundancy data rewriting circuit 17 which can input other redundancy data again to the register from an element other than storage elements and can rewrite stored redundancy data.
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