| 摘要 |
To provide a semiconductor device having a new structure capable of simultaneously realizing high operational function and high reliability, in an activation region 102 sandwiched by a source region 101 and a drain region 103 constituted by a crystalline semiconductor, SixGe1-x regions 105 are formed by locally adding germanium and a depletion layer widening from the drain side toward the source side is effectively restrained by utilizing a difference in band structures of the SixGe1-x regions 105 and Si regions 106 where germanium is not added.
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