| 发明名称 |
Boric acid containing compositions for stripping residues from semiconductor substrates |
| 摘要 |
The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight):The preferred amines are:Monoethanolamine (MEA)Triethanolamine (TEA)
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| 申请公布号 |
US6306807(B1) |
申请公布日期 |
2001.10.23 |
| 申请号 |
US19990312933 |
申请日期 |
1999.05.17 |
| 申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
WOJTCZAK WILLIAM A.;GUAN GEORGE;NGUYEN LONG |
| 分类号 |
G03F7/42;H01L21/304;H01L21/306;H01L21/311;(IPC1-7):C11D7/08;C11D7/32 |
主分类号 |
G03F7/42 |
| 代理机构 |
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