| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride sintered compact having improved wear resistance and effectively suppressed dispersion. SOLUTION: The level of glass peak is controlled so that when scattering intensity at 1,200 cm-1 in a spectrum profile obtained by Raman spectrosopic analysis of a sintered compact is defined as X1 and the standard scattering intensity level is defined as X0, the increased scattering intensity, Y1=X1-X0, becomes not less than 1,500 counts. Thereby, the wear resistance of the silicon nitride sintered compact can be improved and further the dispersion of the sintered compact can be suppressed. |
