发明名称 Semiconductor device, active matrix substrate and process for production thereof
摘要 A process for producing a semiconductor device comprises a step of polishing of a region of an electroconductive material serving as an electrode or a wiring line in an insulating layer formed on a semiconductor region, the region of the electroconductive material being electrically connected to the semiconductor region, wherein a region of another material is formed within the region of the electroconductive material to be polished. Also a semiconductor device having the region is provided. A process for producing an active matrix substrate comprises a step of polishing of picture element electrodes made of a metal provided on crossing portions of plural signal lines and plural scanning lines and a means for applying voltage to the picture elements, wherein a region of another material is formed within the region of the picture element electrode to be polished. An active matrix substrate has such picture element electrodes as mentioned above.
申请公布号 US6307264(B1) 申请公布日期 2001.10.23
申请号 US19960714437 申请日期 1996.09.16
申请人 CANON KABUSHIKI KAISHA 发明人 FUKUMOTO YOSHIHIKO
分类号 G02F1/136;G02F1/1335;G02F1/1362;G02F1/1368;G09F9/30;H01L21/02;H01L21/304;H01L21/306;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;H01L27/12;(IPC1-7):H01L23/52 主分类号 G02F1/136
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