发明名称 |
METHOD FOR CONTROLLING SURFACE TEMPERATURE OF WAFER |
摘要 |
PURPOSE: A control method of a surface temperature of a wafer is provided to improve a uniformity of the whole wafer surface temperature by a heating plate. CONSTITUTION: A heating plate(200) is divided by a plurality of point cell units. Each point cell units have a thermocouple semiconductor. A wafer is then loaded on the heating plate(200). A point cell region(210b) having locally low temperature is applied to a positive bias, thereby increasing the surface temperature of the wafer. Also, a point cell region(210c) having locally high temperature is applied to a negative bias, thereby decreasing the surface temperature of the wafer.
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申请公布号 |
KR20010090151(A) |
申请公布日期 |
2001.10.18 |
申请号 |
KR20000014800 |
申请日期 |
2000.03.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, BONG;PARK, DAL |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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