发明名称 METHOD FOR CONTROLLING SURFACE TEMPERATURE OF WAFER
摘要 PURPOSE: A control method of a surface temperature of a wafer is provided to improve a uniformity of the whole wafer surface temperature by a heating plate. CONSTITUTION: A heating plate(200) is divided by a plurality of point cell units. Each point cell units have a thermocouple semiconductor. A wafer is then loaded on the heating plate(200). A point cell region(210b) having locally low temperature is applied to a positive bias, thereby increasing the surface temperature of the wafer. Also, a point cell region(210c) having locally high temperature is applied to a negative bias, thereby decreasing the surface temperature of the wafer.
申请公布号 KR20010090151(A) 申请公布日期 2001.10.18
申请号 KR20000014800 申请日期 2000.03.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, BONG;PARK, DAL
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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