发明名称 |
Nitride compound semiconductor light emitting device and method for producing the same |
摘要 |
A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
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申请公布号 |
US2001030329(A1) |
申请公布日期 |
2001.10.18 |
申请号 |
US20010759312 |
申请日期 |
2001.01.12 |
申请人 |
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发明人 |
UETA YOSHIHIRO;YUASA TAKAYUKI;OGAWA ATSUSHI;TSUDA YUHZOH;ARAKI MASAHIRO |
分类号 |
H01L33/06;H01L33/16;H01L33/32;H01S5/30;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01L31/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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