发明名称 |
Wiring for semiconductor device and method for forming the same |
摘要 |
Wiring for a semiconductor device which is suitable for high density device packing, and a method for forming the same, are disclosed. The wiring includes: impurity regions formed in a substrate on both sides of an insulated gate electrode; a first conduction layer formed on the impurity regions; and a second conduction layer formed in contact with the first conduction layer on one side of the gate electrode. The method includes the steps of: forming impurity regions in a substrate on both sides of an insulated gate electrode; forming a first conduction layer on the impurity regions; and forming a second conduction layer in contact on one side of the gate electrode with the first conduction layer.
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申请公布号 |
US2001030334(A1) |
申请公布日期 |
2001.10.18 |
申请号 |
US20010883988 |
申请日期 |
2001.06.20 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE CHANG JAE |
分类号 |
H01L21/28;H01L21/768;H01L21/8242;H01L23/485;H01L27/108;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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