| 摘要 |
Magnetoresistive sensors for angle measurements such as, for example, the sensors of the type KMZ 41, manufactured and marketed by Philips Semiconductors, utilize the effect that a sufficiently strong, external magnetic field H rotates the internal magnetization M in a parallel direction. In the case of said sensor KMZ 41, the magnetic field strength required for full alignment of the internal magnetization is 70 to 100 kA/m. A reduction of this high field strength is desirable and may be achieved by increasing the tendency of the internal magnetization to change its direction. An increase of the tendency of the internal magnetization to change its alignment is achieved in accordance with the invention by strip-shaped sensor elements of NiFe material having elliptical contours or tapered ends. A reduction of the magnetic field strength required for a saturation, i.e. full alignment, to 20 to 30 kA/m is thereby possible.
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