| 摘要 |
<p>The present invention relates to methods for repairing defects (8, 10) on a semiconductor substrate. This is accomplished by selectively depositing the conductive material in defective portions (8) in the cavities while removing residual portions (10) from the field regions of the substrate. Another method according to the present invention includes forming a uniform conductive material overburden (7) on a top surface of the substrate. The present invention also disclosed a method for depositing a second conductive material on the first conductive material of the substrate.</p> |
