发明名称 |
Selective growth of Ferromagnetic films |
摘要 |
A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate,. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material
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申请公布号 |
US2001031384(A1) |
申请公布日期 |
2001.10.18 |
申请号 |
US20010879156 |
申请日期 |
2001.06.13 |
申请人 |
BOJARCZUK NESTOR A.;DUNCOMBE PETER R.;GUHA SUPRATIK;GUPTA ARUNAVA;KARASINSKI JOSEPH M.;LI XINWEI |
发明人 |
BOJARCZUK NESTOR A.;DUNCOMBE PETER R.;GUHA SUPRATIK;GUPTA ARUNAVA;KARASINSKI JOSEPH M.;LI XINWEI |
分类号 |
G11B5/73;G11B5/855;(IPC1-7):G11B5/64 |
主分类号 |
G11B5/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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