发明名称 Selective growth of Ferromagnetic films
摘要 A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate,. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material
申请公布号 US2001031384(A1) 申请公布日期 2001.10.18
申请号 US20010879156 申请日期 2001.06.13
申请人 BOJARCZUK NESTOR A.;DUNCOMBE PETER R.;GUHA SUPRATIK;GUPTA ARUNAVA;KARASINSKI JOSEPH M.;LI XINWEI 发明人 BOJARCZUK NESTOR A.;DUNCOMBE PETER R.;GUHA SUPRATIK;GUPTA ARUNAVA;KARASINSKI JOSEPH M.;LI XINWEI
分类号 G11B5/73;G11B5/855;(IPC1-7):G11B5/64 主分类号 G11B5/73
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