发明名称 HIGH TRANSMISSION, LOW ENERGY BEAMLINE APPARATUS FOR ION IMPLANTER
摘要 An ion beam apparatus includes an ion source, a first magnet assembly, a structure defining a resolving aperture and a second magnet assembly. The ion source has an elongated extraction aperture for generating a ribbon ion beam. The first magnet assembly provides first magnetic fields for deflecting the ribbon ion beam perpendicular to the long dimension of the ribbon ion beam cross section, wherein different ion species in the ribbon ion beam are separated. The resolving aperture selects an ion species from the separated ion beam. The second magnet assembly provides second magnetic fields for deflecting ions of the selected ion species in the ribbon ion beam parallel to the long dimension of the ribbon ion beam cross section to produce desired ion trajectories. The width of the ribbon ion beam increases through most of the beamline. As a result, low energy performance is enhanced.
申请公布号 WO0126133(A3) 申请公布日期 2001.10.18
申请号 WO2000US25555 申请日期 2000.09.18
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 RENAU, ANTHONY
分类号 H01J37/05;H01J37/147;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 H01J37/05
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