发明名称 FUSE CIRCUIT AND METHOD FOR DETECTING PROGRAM STATE THEREOF
摘要 PURPOSE: A fuse circuit and method thereof are provided to improve reliability of electrically the programmable fuse. CONSTITUTION: When resistive value of a first fuse unit(102) is smaller than that of a second fuse unit(104), voltage levels of nodes(ND10,ND20) of a fuse circuit(200) are determined by the size of capacitive parasitic loading of each node. When a control pulse signal(MRS1) transits a low level to a high level, NMOS transistors(114,116) are turn-on. Thereby, fine voltage differences due to resistive difference of the fuse units(102,104) create between the nodes(ND10,ND20) according to a plurality of PMOS and NMOS transistors(106,108,114,116) used as current sense amplifier circuits. The current applied to the first and second fuse units(102,104) having difference resistive value is constantly discharged via the NMOS transistors(114,116) having same discharging capability regardless of the size of capacitive parasitic loading of the nodes(ND10,ND20). Thereby, the voltage of the first node(ND10) is highly set compared to the voltage of the second node(ND20).
申请公布号 KR20010090149(A) 申请公布日期 2001.10.18
申请号 KR20000014798 申请日期 2000.03.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SANG SEOK;LIM, GYU NAM
分类号 G11C17/18;(IPC1-7):H01L27/02 主分类号 G11C17/18
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