发明名称 Memory architecture with single-port cell and dual-port (read and write) functionality
摘要 In a memory module having a designated group of memory cells assigned to represent a logical portion of the memory structure, a memory redundancy circuit having a redundant group of memory cells; and a redundancy controller coupled with the designated group and the redundant group. The redundancy controller, which can include a redundancy decoder, assigns the redundant group to the logical portion of the memory structure in response to a preselected memory group condition, e.g., a "FAILED" memory group condition. The redundancy controller also can includeselectable switches, for example, fuses, which can encode the preselected memory group condition. The designated group of memory cells and the redundant group of memory cells can be a memory row, a memory column, a preselected portion of a memory module, a selectable portion of a memory module, a memory module, or a combination thereof.
申请公布号 US2001030893(A1) 申请公布日期 2001.10.18
申请号 US20010775701 申请日期 2001.02.02
申请人 TERZIOGLU ESIN;AFGHAHI MORTEZA CYRUS 发明人 TERZIOGLU ESIN;AFGHAHI MORTEZA CYRUS
分类号 G11C7/06;G11C8/02;(IPC1-7):G11C29/00 主分类号 G11C7/06
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