| 摘要 |
PURPOSE: Provided is a lithocholylacidyl(meth)acrylate monomer, a copolymer resin having the monomer, and a photoresist composition containing the copolymer resin, which can be applied to a lithography process using KrF or ArF light source. CONSTITUTION: The lithocholylacidyl(meth)acrylate monomer is represented by the formula 1, wherein R1 is a protecting group sensitive to hydrogen or acid and R2 is hydrogen or methyl. The copolymer contains the lithocholylacidyl(meth)acrylate monomer and is poly £5beta-(t-butoxycarbonyl)-chlolan-24-yl-3-(meth)acrylate/5beta-cholan-24-oic acidyl-3-(meth)acrylate| represented by the formula 6, wherein R1 and R2 are each hydrogen or methyl and x and y are each a mole fraction of 0.05-0.9. And the photoresist composition contains the copolymer, an organic solvent, and a photoacid generator.
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