发明名称 Method of manufacturing near field light generating device
摘要 A method of manufacturing a near field light generating device is provided. A photoresist layer is formed on a transparent layer (123). Then, illumination light (L2) directed from the side of solid immersion lenses (11) passes through first openings (122a) and the transparent layer (123) to reach and expose the photoresist layer. After development of the photoresist layer, exposed parts of the photoresist remain as microscopic resist regions (MR) in positions corresponding to the first openings (122a). After a second opaque layer (124) is formed on the transparent layer (123) and the microscopic resist regions (MR), the microscopic resist regions (MR) are removed by a lift-off method to form second openings (124a) in the second opaque layer (124). The first openings (122a) are thus used as a photomask to form the second openings (124a). Therefore, a large number of microscopic openings (MO) having good product quality are formed accurately and easily as the near field light generating device.
申请公布号 US6303402(B1) 申请公布日期 2001.10.16
申请号 US20000604408 申请日期 2000.06.27
申请人 MINOLTA CO., LTD. 发明人 HATANO TAKUJI;SATO AKIRA
分类号 G11B7/22;G01Q60/22;G01Q80/00;G11B7/135;H01L21/00;H01L21/84;(IPC1-7):H01L21/00 主分类号 G11B7/22
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