| 摘要 |
A semiconductor device includes a gate electrode (4) on a semiconductor substrate (1) of one conductivity type with a gate insulating film (3); first and second diffusion regions (5, 10) of another conductivity type; and a contact hole (17) for electrically connecting one (first) (10) of the first and second diffusion regions (5, 10) to a lower electrode (8) of a cell capacitor for storing charge therein, and when a reverse voltage Vrev is applied as a junction application voltage between semiconductors of different conductivity types of the first diffusion region (10) and substrate (1), a leakage current Ileak flows between the first diffusion region (10) and substrate (1), and Vrev when the leakage current Ileak is(where a charge storage capacitance in the cell capacitor is Cs, a voltage applied to a data line (12) connected to the other (second) (5) of the first and second diffusion regions (5, 10) is Vbit, a target charge retention time is T and an area of the first diffusion region (10) is S) is three times or higher than the voltage Vbit applied to the data line (12) at room temperature.
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