Sidewall structure for metal interconnect and method of making same

摘要

Disclosed is an integrated circuit structure having one or more metal lines thereon with metal line sidewall retention structures formed on the sides of the metal lines. The metal line sidewall retention structures comprise a material sufficiently hard to inhibit lateral distortion or expansion of portions of the metal line during subsequent processing or use of the metal line. The metal line sidewall retention structures are formed by anisotropically etching a layer of a material sufficiently hard to inhibit lateral distortion or expansion of portions of the metal line after formation of a layer of such a material over and around the sides of the metal lines.