| 摘要 |
PURPOSE:To obtain a single crystal film which is not cracked at the time of growing a desired single crystal film on a single crystal substrate of lithium niobate having a congruent composition by growing an epitaxially grown single crystal transition layer in between to suppress the stress and strain. CONSTITUTION:An epitaxially grown single crystal transition layer is provided on a substrate consisting of a lithium niobate single crystal having a congruent composition. The transition layer is formed at the growth temp. changing rate of <=10 deg.C/min through the growth. The lattice constant is continuously changed in the epitaxial growth direction between the desired single crystal having different lattice constant and the single crystal substrate. Accordingly, a single crystal having <=0.002Angstrom lattice constant different from the substrate is continuously changed to a single crystal having <=0.002Angstrom lattice constant different from the desired single crystal. The growth temp. is then kept constant, and a desired single crystal is grown. |
