| 摘要 |
PROBLEM TO BE SOLVED: To perform dry etching process, where the etching speed of an object to be etched is fast without the adhesion of the object to be etched to a mask sidewall, by reducing the supply quantity of etching gas as much as possible in a process, where a mixed gas of halogen based gas and rare gas is used, the high-melting point material of Ir and Pt subjected to dry etching and a pattern is formed. SOLUTION: When the supply quantity of etching gas is reduced, since the plasma density of halogen atoms is reduced, adhesion of the object to be etched to the mask sidewall increases and etching speed is reduced. Consequently, the concentration of halogen gas increases or plasma source power increases. Then, the supply quantity of etching gas is reduced, by preventing the reduction of the plasma density of the halogen atoms.
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