METHOD OF FORMING DIELECTRIC FILM

摘要

PROBLEM TO BE SOLVED: To improve uniformity in a dielectric film and control the composition along the thickness direction of the dielectric film by eliminating incubation time in forming the dielectric film by a CVD method on a Si substrate surface, that is covered by a thin molecular layer of an insulator. SOLUTION: The CVD process for forming the dielectric film starts, after a vapor-phase molecular compound of a metal element that constitutes the dielectric film, is made to adsorb uniformly on the molecular layer of the insulator and is oxidized to form a dielectric molecular layer.