SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology to reduce the influence of surface scattering on the current by controlling the positions of projecting parts called ridges formed randomly on the surface of a crystalline semiconductor film formed by a laser crystallization method. SOLUTION: A heat absorption layer formed of a material having a coefficient of thermal conductivity larger than that of a substrate including a base film constituted of a crystalline tin film is formed in an arbitrary shape. After laser annealing, a temperature difference is generated between a semiconductor thin film 1010 located above the heat absorption layer 1011 formed on the substrate 1014 through the base film 1012 and the semiconductor thin film 1013, causing a difference in thermal expansion having an external edge 1015 of the heat absorption layer as a boundary. The difference in thermal expansion causes a distortion starting from the boundary. The distortion is propagated as a surface wave, forming a surface wave starting from the external periphery of the heat absorption layer, near the heat absorption layer. Melting is followed by solidification, when the projecting parts of the surface wave are left over as projecting parts after the solidification.