| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory equipped with an internal voltage generating circuit which can perform stable operation without internal voltage resetting even if external voltage drops temporarily. SOLUTION: This semiconductor memory is provided with an internal voltage generating circuit which can perform stable operation and is not affected by external noise and the like without internal voltage resetting even if external voltage drops temporarily in low voltage operation, by adding a latch circuit 21, where a signal INITI whose state transits when external voltage VEXT reaches the prescribed level is inputted to a delay circuit 12, to a control circuit of power-on-sequence.</p> |
