发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
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申请公布号 |
US2001029070(A1) |
申请公布日期 |
2001.10.11 |
申请号 |
US20010874670 |
申请日期 |
2001.06.05 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;SHIBATA HIROSHI;FUKUNAGA TAKESHI |
分类号 |
G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/04;H01L29/423;H01L29/786;(IPC1-7):H01L21/00;H01L21/20;H01L21/301;H01L21/46;H01L21/78 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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