发明名称 |
Exposure pattern data generation apparatus associated with standard cell library and charged beam exposure |
摘要 |
Logic synthesis is conducted for CP apertures 44 using standard cells corresponding to shaping holes 4 used in logic design of a system and placed at first placement positions on the respective CP apertures 44. A CP aperture 44 used for exposure is selected from among the CP apertures for which logic synthesis has been conducted. Second placement positions of the standard cells on a substrate which standard cells correspond to the shaping holes 4 provided on the selected CP aperture 44 and wiring routes the standard cells are calculated. |
申请公布号 |
US2001028991(A1) |
申请公布日期 |
2001.10.11 |
申请号 |
US20010817270 |
申请日期 |
2001.03.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
INANAMI RYOICHI;MAGOSHI SHUNKO |
分类号 |
G03F1/08;G03F1/68;G03F1/70;G03F7/20;H01J37/302;H01L21/027;H01L21/82;(IPC1-7):G03C5/00;A61N5/00;G21G5/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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