发明名称 Exposure pattern data generation apparatus associated with standard cell library and charged beam exposure
摘要 Logic synthesis is conducted for CP apertures 44 using standard cells corresponding to shaping holes 4 used in logic design of a system and placed at first placement positions on the respective CP apertures 44. A CP aperture 44 used for exposure is selected from among the CP apertures for which logic synthesis has been conducted. Second placement positions of the standard cells on a substrate which standard cells correspond to the shaping holes 4 provided on the selected CP aperture 44 and wiring routes the standard cells are calculated.
申请公布号 US2001028991(A1) 申请公布日期 2001.10.11
申请号 US20010817270 申请日期 2001.03.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 INANAMI RYOICHI;MAGOSHI SHUNKO
分类号 G03F1/08;G03F1/68;G03F1/70;G03F7/20;H01J37/302;H01L21/027;H01L21/82;(IPC1-7):G03C5/00;A61N5/00;G21G5/00 主分类号 G03F1/08
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