| 摘要 |
A structure (110, 150) for enhancing the quality factor (Q) of a capacitive circuit (112, 152). The capacitive circuit (112, 152) includes a first resistance (122, 164), a capacitance (124, 166), and a second resistance (126, 168). The capacitance (124, 166) represents the net capacitance of the capacitive circuit (112, 152), and the first resistance (122, 164) and second resistance (126, 168) represent elements of the intrinsic resistance of the capacitive circuit (112, 152). In one embodiment the structure (110) includes a first capacitor (128) which is connected in parallel with the capacitive circuit (112), and second capacitor (130) which is connected in series with the capacitive circuit (112). In a second embodiment the structure (150) includes a first inductor (164), connected in series between the capacitive circuit (152) and a node (162) where the first capacitor (174) and one end of the second capacitor (176) connect, and a second inductor (172) connected in series between the capacitive circuit (152) and the other end of the second capacitor (130).
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