发明名称 Method for manufacturing semiconductor dynamic quantity sensor
摘要 In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.
申请公布号 US2001029060(A1) 申请公布日期 2001.10.11
申请号 US20010861535 申请日期 2001.05.22
申请人 DENSO CORPORATION 发明人 FUKADA TSUYOSHI;SAKAI MINEKAZU;MURATA MINORU;TAKEUCHI YUKIHIRO;AOYAMA SEIKI
分类号 B81B3/00;B81C1/00;G01P15/08;G01P15/125;(IPC1-7):H01L21/00 主分类号 B81B3/00
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