Method for forming pattern

摘要

A method for forming a pattern, comprising: a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when the profile of the resist pattern tends to be a T-top profile as compared with a reference pattern profile but setting the humidity at a high level when the profile of the resist pattern tends to be a round-shoulder profile as compared with the reference pattern profile; a second step of forming a resist film by coating a substrate with a resist; a third step of exposing said resist film through a mask in an environment with the humidity set at said first step; and a fourth step of developing said resist film which is exposed to thereby form a resist pattern.