| 摘要 |
PROBLEM TO BE SOLVED: To provide a transparent gas barrier film having a gas barrier film, which has high gas barrier properties even if thin, formed thereon. SOLUTION: In the transparent gas barrier film 1 wherein a gas barrier film 5 comprising an inorganic compound is provided on the single surface or both surfaces of a base material 2, the gas barrier film 5 is formed by forming a first film 3 comprising the inorganic compound on the base material and subsequently dissolving the surface of the first film 3 by a chemical etching liquid and again forming a second film 4 comprising the inorganic compound on the surface after dissolving of the first film 3. At this time, the inorganic compound is silicon oxide and the chemical etching liquid is preferably hydrofluoric acid, an ammonium fluoride aqueous solution or a mixed solution of them and the first and second films are preferably formed by a plasma CVD method.
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