| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser wherein a reflecting mirror surface of high quality can be obtained with superior reproducibility in a laser structure. SOLUTION: In this manufacturing method of a nitride semiconductor laser, a plurality of crystal layers which include active layers and are composed of group III nitride semiconductor are laminated in order on a base substance layer. The method includes processes wherein the plurality of crystal layers are formed on the base substance layer formed on a substrate, an electrode layer is formed on the uppermost surface of the crystal layers, a metal film is plated on the electrode layer, a decomposed substance region of nitride semiconductor is formed by casting a light from the substrate side toward an interface between the substrate and the base substance layer, the base substance layer supporting the crystal layers is peeled from the substrate along the decomposed substance region and cleaved, and a cleavage surface to be turned into a laser resonator is formed.
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